1/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.c -100ma / -50v digital transistors (with built-in resistor) dta144tm / dta144te / dta144tua / dta144tka ? applications inverter, interface, driver ? features 1) built-in bias resistors enable the conf iguration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) the bias resistors consist of thin-film resistors with comple te isolation to allow positive biasing of the input. they also have the advantage of almost completely eliminating parasitic effects. 3) only the on/off conditions need to be set for operation, making the device design easy. ? structure pnp epitaxial planar silicon transistor (resistor built-in type) ? dimensions (unit : mm) abbreviated symbol : 96 abbreviated symbol : 96 abbreviated symbol : 96 abbreviated symbol : 96 rohm : vmt3 dta144tm rohm : emt3 dta144te 1.6 0.7 0.15 0.1min. 0.55 0.2 1.6 1.0 0.3 0.8 ( 2 ) 0.5 0.5 ( 3 ) 0.2 ( 1 ) rohm : smt3 eiaj : sc-59 dta144tka rohm : umt3 eiaj : sc-70 dta144tua each lead has same dimensions each lead has same dimensions (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.2 ( 2 ) ( 1 ) 0.2 0.15 0.1min. 0.9 0.7 1.25 2.1 0.3 ( 3 ) 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 (1) base (2) emitter (3) collector (1) emitter (2) base (3) collector (1) emitter (2) base (3) collector (1) emitter (2) base (3) collector ? inner circuit r 1 b e c b : base c : collector e : emitter r 1 =47k
2/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.c data sheet dta144tm / dta144te / dta144tua / dta144tka ? packaging specifications tl umt3 emt3 smt3 dta144te part no. dta144tua dta144tm 3000 t106 3000 t146 3000 dta144tka t2l vmt3 8000 ? ? ? ? ? ? ? ? ? ? ? ? package packaging type taping taping taping taping code basic ordering unit (pieces) ? absolute maximum ratings (ta=25 ? c) parameter symbol v cbo ? 50 ? 50 ? 5 ? 100 150 200 150 ? 55 to + 150 dta144te dta144tm dta144tua dta144tka v v ma mw c c v ceo v ebo i c pc tj tstg unit limits collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ? electrical characteristics (ta=25 ? c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) r 1 f t min. ? 50 ? 50 ? 5 ? ? 100 ? 32.9 ? ? i c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 50v v eb = ? 4v v ce = ? 5v, i c = ? 1ma i c /i b = ? 5ma/ ? 0.5ma v ce = ? 10v, i e = 5ma, f = 100mhz ? ? ? ? ? ? 250 ? 47 250 typ. ? ? ? ? 0.5 ? 0.5 600 ? 0.3 61.1 ? max. v v v a a ? v k mhz unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage input resistance transition frequency ? characteristics of built-in transistor ? electrical characteristic curves v ce =? 5v ? 100 ? 1m ? 10m ? 200 ? 2m ? 20m ? 500 ? 5m ? 50m ? 100m 1k 500 200 100 50 20 10 5 2 1 dc current gain : h fe collector current : i c (a) fig.1 dc current gain vs.collector current ta = 100 c 25 c ? 40 c l c /l b = 10 ? 10 ? 100 ? 1m ? 20 ? 200 ? 2m ? 50 ? 500 ? 5m ? 10m ta = 100 c 25 c ? 40 c ? 500m ? 200m ? 100m ? 50m ? 20m ? 10m ? 5m ? 2m ? 1m ? 1 collector saturation voltage : v ce(sat) (v) collector current : i c (a) fig.2 collector-emitter saturation voltage vs.collector current
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